EEE 550 Nanoelectronic Devices: Physics and Technology

Semiconductor electronics technology, overview of fabrication methods, physics of semiconductors in equilibrium and non-equilibrium, movement of free carriers in semiconductors, p-n and metal-semiconductor junctions, heterojunctions and quasi-electric fields, basic quantum mechanics for nanoscale semiconductor structures and quantum-effect devices, metal-oxide-semiconductor capacitor and MOS transistors, bipolar junction transistors, field effect transistors and nanowire FETs, high electron mobility transistors, resonant tunneling in semiconductor nanostructures, transistor scaling issues, ballistic transport and ballistic transistors, graphene transistors. Credit units: 3 ECTS Credit units: 7.5.

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