EEE 418 Principles of Electronic Devices

Crystal structure and Growth techniques. Foundations of modern electronics. Energy bands in solids. Tunneling. Carrier concentrations and transport properties in semiconductors. Equilibrium states of PN junctions. Transient analysis of PN junction diodes. SS, MS, SIS junction characteristics and principles of special purpose diodes. BJT equilibrium states and Ebers-Moll static model. Secondary effects and transient states in BJTs. Small signal model. JFET characteristics and equilibrium states. Principles of metal-insulator-semiconductor transistors and dc characteristics. Credit units: 4 ECTS Credit units: 6.5, Prerequisite: EEE 202 and EEE 211 and PHYS 102.

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